IRFP4232PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

15.87mm

Power Dissipation :

430W

Turn-Off Delay Time :

64 ns

Resistance :

35.7MOhm

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Width :

5.3086mm

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

7290pF @ 25V

Min Operating Temperature :

-40°C

Vgs (Max) :

±20V

Voltage - Rated DC :

250V

Termination :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

250V

Turn On Delay Time :

37 ns

Nominal Vgs :

5 V

Package / Case :

TO-247-3

Dual Supply Voltage :

250V

REACH SVHC :

No SVHC

Drain to Source Voltage (Vdss) :

250V

Operating Temperature :

-40°C~175°C TJ

Height :

20.7mm

Vgs(th) (Max) @ Id :

5V @ 250μA

Element Configuration :

Single

Mount :

Through Hole

FET Type :

N-Channel

Rds On Max :

35.7 mΩ

Power Dissipation-Max :

430W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Threshold Voltage :

5V

Input Capacitance :

7.29nF

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Lead Free :

Lead Free

Drain to Source Resistance :

35.7MOhm

Number of Elements :

1

RoHS Status :

RoHS Compliant

Continuous Drain Current (ID) :

60A

Series :

HEXFET®

Max Operating Temperature :

175°C

Current Rating :

60A

Radiation Hardening :

No

Published :

2007

Supplier Device Package :

TO-247AC

Packaging :

Bulk

Rds On (Max) @ Id, Vgs :

35.7mOhm @ 42A, 10V

Mounting Type :

Through Hole