IRFP243

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

150 V

Package Shape :

RECTANGULAR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

60 nC @ 10 V

Series :

-

Number of Elements :

1

Pbfree Code :

No

Qualification Status :

COMMERCIAL

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On, Min Rds On) :

10V

JESD-609 Code :

e0

Operating Temperature :

-55°C ~ 150°C (TJ)

Configuration :

SINGLE WITH BUILT-IN DIODE

Supplier Device Package :

TO-247

Pulsed Drain Current-Max (IDM) :

72 A

FET Type :

N-Channel

Surface Mount :

No

Number of Terminals :

3

Product Status :

Active

Drain to Source Voltage (Vdss) :

150 V

Manufacturer :

Rochester Electronics LLC

RoHS :

Non-Compliant

Reach Compliance Code :

Unknown

FET Feature :

-

Terminal Finish :

TIN LEAD

Case Connection :

DRAIN

Vgs (Max) :

±20V

Terminal Form :

THROUGH-HOLE

Rds On (Max) @ Id, Vgs :

220mOhm @ 10A, 10V

Package :

Bulk

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code :

TO-247

Avalanche Energy Rating (Eas) :

510 mJ

Pin Count :

3

Transistor Application :

SWITCHING

Power Dissipation (Max) :

150W (Tc)

Transistor Element Material :

SILICON

Terminal Position :

Single

Drain-source On Resistance-Max :

0.22 Ω

JESD-30 Code :

R-PSFM-T3

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1275 pF @ 25 V

Package / Case :

TO-247-3

Current - Continuous Drain (Id) @ 25°C :

18A (Tc)

Polarity/Channel Type :

N-Channel