IRFP140N

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

100V

Operating Temperature :

-55°C~175°C TJ

Packaging :

Bulk

Drain Current-Max (Abs) (ID) :

33A

JESD-30 Code :

R-PSFM-T3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

Non-RoHS Compliant

Power Dissipation-Max :

140W Tc

Avalanche Energy Rating (Eas) :

300 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.052Ohm

Gate Charge (Qg) (Max) @ Vgs :

94nC @ 10V

Pulsed Drain Current-Max (IDM) :

110A

Additional Feature :

AVALANCHE RATED, FAST SWITCHING

Package / Case :

TO-247-3

Published :

1998

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V

Series :

HEXFET®

Vgs(th) (Max) @ Id :

4V @ 250µA

JEDEC-95 Code :

TO-247AC

Mounting Type :

Through Hole

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

52m Ω @ 16A, 10V

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Case Connection :

DRAIN

Vgs (Max) :

±20V

Number of Elements :

1

DS Breakdown Voltage-Min :

100V

Drive Voltage (Max Rds On,Min Rds On) :

10V