IRFI4212H-117P

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

490pF @ 50V

Fall Time (Typ) :

4.3 ns

Recovery Time :

54 ns

Width :

4.83mm

Transistor Application :

AMPLIFIER

Factory Lead Time :

12 Weeks

Max Power Dissipation :

18W

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

9.5 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Published :

2006

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

41 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Voltage (Vdss) :

100V

Length :

10.67mm

Power Dissipation :

18W

FET Type :

2 N-Channel (Dual)

Element Configuration :

Dual

Height :

9.02mm

Drain to Source Breakdown Voltage :

100V

Case Connection :

Isolated

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

44A

Nominal Vgs :

5 V

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-220-5 Full Pack

Number of Elements :

2

Number of Pins :

5

Rise Time :

8.3ns

FET Feature :

Standard

Continuous Drain Current (ID) :

11A

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

4.7 ns

Rds On (Max) @ Id, Vgs :

72.5m Ω @ 6.6A, 10V

Number of Terminations :

5

Resistance :

72.5mOhm

Mounting Type :

Through Hole

Lead Free :

Lead Free

ECCN Code :

EAR99

Threshold Voltage :

5V

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Mount :

Through Hole