IRFI1010NPBF
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- Mfr.Part #
- IRFI1010NPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 49A TO220AB FP
- Stock
- 10,955
- In Stock ：
- 10,955
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Voltage - Rated DC :
- 55V
- Packaging :
- Tube
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 2900pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 12m Ω @ 26A, 10V
- Turn On Delay Time :
- 11 ns
- Lead Free :
- Lead Free
- Width :
- 4.826mm
- Factory Lead Time :
- 14 Weeks
- Height :
- 9.8mm
- Case Connection :
- Isolated
- Continuous Drain Current (ID) :
- 49A
- JEDEC-95 Code :
- TO-220AB
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 46 ns
- Power Dissipation :
- 47W
- Number of Elements :
- 1
- Package / Case :
- TO-220-3 Full Pack
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 290A
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Resistance :
- 12mOhm
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 58W Tc
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- Threshold Voltage :
- 4V
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 55V
- Current Rating :
- 49A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Length :
- 10.6172mm
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 40 ns
- Current - Continuous Drain (Id) @ 25°C :
- 49A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 1997
- Rise Time :
- 66ns
- Qualification Status :
- Not Qualified
- Number of Pins :
- 3
- Series :
- HEXFET®
- Drain Current-Max (Abs) (ID) :
- 44A
- Datasheets
- IRFI1010NPBF
N-Channel Tube 12m Ω @ 26A, 10V ±20V 2900pF @ 25V 130nC @ 10V TO-220-3 Full Pack
IRFI1010NPBF Overview
A device's maximal input capacitance is 2900pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 49A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 55V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 44A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 40 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 290A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).
IRFI1010NPBF Features
a continuous drain current (ID) of 49A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 290A.
a threshold voltage of 4V
IRFI1010NPBF Applications
There are a lot of Infineon Technologies
IRFI1010NPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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