IRFI3205PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Current Rating :

64A

Termination :

Through Hole

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Voltage - Rated DC :

55V

Dual Supply Voltage :

55V

REACH SVHC :

No SVHC

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Isolation Voltage :

2kV

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

64A Tc

Nominal Vgs :

4 V

Drain to Source Breakdown Voltage :

55V

Factory Lead Time :

12 Weeks

Avalanche Energy Rating (Eas) :

480 mJ

Published :

1997

Package / Case :

TO-220-3 Full Pack

Rise Time :

100ns

Lead Free :

Lead Free

FET Type :

N-Channel

Continuous Drain Current (ID) :

64A

Number of Pins :

3

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Threshold Voltage :

4V

Rds On (Max) @ Id, Vgs :

8m Ω @ 34A, 10V

Power Dissipation-Max :

63W Tc

Input Capacitance (Ciss) (Max) @ Vds :

4000pF @ 25V

Transistor Element Material :

SILICON

Case Connection :

Isolated

Drain Current-Max (Abs) (ID) :

56A

Fall Time (Typ) :

70 ns

Packaging :

Tube

Height :

9.8mm

Turn-Off Delay Time :

43 ns

Length :

10.7442mm

Power Dissipation :

63W

Gate to Source Voltage (Vgs) :

20V

Recovery Time :

170 ns

Resistance :

8mOhm

Turn On Delay Time :

14 ns

Number of Terminations :

3

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Width :

4.826mm

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single