IRFI4110GPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Number of Terminations :

3

Mount :

Through Hole

Package / Case :

TO-220-3 Full Pack

Number of Elements :

1

Threshold Voltage :

4V

Height :

16.13mm

JEDEC-95 Code :

TO-220AB

Series :

HEXFET®

FET Type :

N-Channel

Element Configuration :

Single

Nominal Vgs :

4 V

Rise Time :

58ns

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

72A

Turn-Off Delay Time :

81 ns

Drain to Source Breakdown Voltage :

100V

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 43A, 10V

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Published :

2008

Termination :

Through Hole

Length :

10.75mm

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

290nC @ 10V

RoHS Status :

ROHS3 Compliant

Case Connection :

Isolated

Vgs (Max) :

±20V

Resistance :

4.5mOhm

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

61W Tc

Power Dissipation :

61W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

9540pF @ 50V

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Turn On Delay Time :

24 ns

Fall Time (Typ) :

71 ns

Pulsed Drain Current-Max (IDM) :

290A

Width :

4.83mm

Mounting Type :

Through Hole

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

72A Tc

Lead Free :

Lead Free