IRFHS9351TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Height :

950μm

Max Power Dissipation :

1.4W

RoHS Status :

RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

2.3A

Packaging :

Cut Tape (CT)

Drain to Source Resistance :

170mOhm

Rds On (Max) @ Id, Vgs :

170mOhm @ 3.1A, 10V

Threshold Voltage :

-1.8V

Supplier Device Package :

6-PQFN Dual (2x2)

Continuous Drain Current (ID) :

-2.3A

Nominal Vgs :

-1.8 V

Vgs(th) (Max) @ Id :

2.4V @ 10μA

Input Capacitance :

160pF

Length :

2.1mm

Published :

2011

Radiation Hardening :

No

Rds On Max :

53 mΩ

Mounting Type :

Surface Mount

Package / Case :

6-PowerVDFN

Number of Pins :

6

FET Feature :

Logic Level Gate

Input Capacitance (Ciss) (Max) @ Vds :

160pF @ 25V

Recovery Time :

30 ns

FET Type :

2 P-Channel (Dual)

Max Operating Temperature :

150°C

Min Operating Temperature :

-55°C

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Dual

Power - Max :

1.4W

Turn On Delay Time :

8.3 ns

Width :

2.1mm

Turn-Off Delay Time :

6.3 ns

REACH SVHC :

No SVHC

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

3.7nC @ 10V

Mount :

Surface Mount

Fall Time (Typ) :

7.9 ns

Drain to Source Voltage (Vdss) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

IRFHS9351PBF

Drain to Source Breakdown Voltage :

-30V

Power Dissipation :

1.4W

Rise Time :

30ns