IRFHM8363TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

ECCN Code :

EAR99

FET Feature :

Logic Level Gate

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Nominal Vgs :

1.8 V

Drain to Source Breakdown Voltage :

30V

Power Dissipation :

2.7W

Continuous Drain Current (ID) :

11A

Number of Pins :

8

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

High Reliability

Turn On Delay Time :

14 ns

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0149Ohm

Package / Case :

8-PowerVDFN

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

1.8V

Radiation Hardening :

No

Element Configuration :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

1165pF @ 10V

Gate to Source Voltage (Vgs) :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2013

Number of Elements :

2

Case Connection :

DRAIN

FET Type :

2 N-Channel (Dual)

Fall Time (Typ) :

33 ns

Max Power Dissipation :

2.7W

Base Part Number :

IRFHM8363PBF

Number of Terminations :

8

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn)

Rise Time :

94ns

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Series :

HEXFET®

Turn-Off Delay Time :

12 ns

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

116A

Rds On (Max) @ Id, Vgs :

14.9m Ω @ 10A, 10V

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

30V