IRFHM792TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

6.3nC @ 10V

Drain to Source Voltage (Vdss) :

100V

Turn On Delay Time :

3.4 ns

Base Part Number :

IRFHM792PBF

Input Capacitance (Ciss) (Max) @ Vds :

251pF @ 25V

Factory Lead Time :

12 Weeks

FET Type :

2 N-Channel (Dual)

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Power Dissipation :

2.3W

ECCN Code :

EAR99

Package / Case :

8-PowerVDFN

Number of Pins :

8

Lead Free :

Lead Free

Terminal Finish :

Matte Tin (Sn)

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

5.2 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

195m Ω @ 2.9A, 10V

Series :

HEXFET®

Max Power Dissipation :

2.3W

Mount :

Surface Mount

Case Connection :

DRAIN

FET Feature :

Standard

Drain to Source Breakdown Voltage :

100V

Fall Time (Typ) :

2.6 ns

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.195Ohm

Pulsed Drain Current-Max (IDM) :

14A

Radiation Hardening :

No

Element Configuration :

Dual

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

2.3A

Drain Current-Max (Abs) (ID) :

3.4A

Vgs(th) (Max) @ Id :

4V @ 10μA

Rise Time :

4.7ns

Published :

2013

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

Number of Terminations :

8