IRFH7911TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Position :

QUAD

JESD-609 Code :

e3

JESD-30 Code :

R-PQFP-N6

Max Power Dissipation :

3.4W

Rds On (Max) @ Id, Vgs :

8.6m Ω @ 12A, 10V

Resistance :

8.6mOhm

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Factory Lead Time :

39 Weeks

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

100A

Qualification Status :

Not Qualified

Terminal Form :

NO LEAD

Base Part Number :

IRFH7911PBF

Power - Max :

2.4W 3.4W

Published :

2011

Number of Elements :

2

FET Feature :

Logic Level Gate

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

SWITCHING

Mount :

Surface Mount

Power Dissipation :

2.4W

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Number of Terminations :

6

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Number of Pins :

18

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Nominal Vgs :

2.35 V

Width :

5mm

Input Capacitance (Ciss) (Max) @ Vds :

1060pF @ 15V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

30V

Case Connection :

DRAIN SOURCE

FET Type :

2 N-Channel (Dual)

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Element Configuration :

Dual

ECCN Code :

EAR99

Series :

HEXFET®

Length :

5.9944mm

Package / Case :

18-PowerVQFN

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

High Reliability

Continuous Drain Current (ID) :

13A

Height :

939.8μm

Current - Continuous Drain (Id) @ 25°C :

13A 28A