IRFH7911TR2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Published :

2012

Width :

5mm

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

20V

Input Capacitance :

1.06nF

Current - Continuous Drain (Id) @ 25°C :

13A 28A

Supplier Device Package :

PQFN (5x6)

Rds On Max :

8.6 mΩ

Radiation Hardening :

No

Continuous Drain Current (ID) :

28A

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Number of Pins :

18

FET Feature :

Logic Level Gate

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Input Capacitance (Ciss) (Max) @ Vds :

1060pF @ 15V

Turn-Off Delay Time :

28 ns

Nominal Vgs :

2.35 V

Mounting Type :

Surface Mount

Power - Max :

2.4W 3.4W

Rds On (Max) @ Id, Vgs :

8.6mOhm @ 12A, 10V

Min Operating Temperature :

-55°C

Packaging :

Cut Tape (CT)

Drain to Source Voltage (Vdss) :

30V

Drain to Source Resistance :

3mOhm

Length :

5.9944mm

Rise Time :

35ns

FET Type :

2 N-Channel (Dual)

Drain to Source Breakdown Voltage :

30V

Number of Elements :

2

Threshold Voltage :

2.35V

Element Configuration :

Dual

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Fall Time (Typ) :

14 ns

Max Operating Temperature :

150°C

Series :

HEXFET®

Recovery Time :

20 ns

Package / Case :

18-PowerVQFN

RoHS Status :

RoHS Compliant

Base Part Number :

IRFH7911PBF

Max Power Dissipation :

3.4W

Mount :

Surface Mount

Power Dissipation :

3.4W

Height :

939.8μm