IRFB3307ZPBF

Manufacturer :

International Rectifier

Product Category :

Specialized ICs

Continuous Drain Current (ID) :

120A

Published :

2004

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

Termination :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

4750pF @ 50V

Turn On Delay Time :

15 ns

Element Configuration :

Single

Power Dissipation-Max :

230W Tc

JEDEC-95 Code :

TO-220AB

Mount :

Through Hole

Rise Time :

64ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Height :

9.02mm

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Radiation Hardening :

No

Nominal Vgs :

4 V

Turn-Off Delay Time :

38 ns

Power Dissipation :

230mW

Width :

4.82mm

Dual Supply Voltage :

75V

Package / Case :

TO-220-3

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Vgs(th) (Max) @ Id :

4V @ 150μA

ECCN Code :

EAR99

Length :

10.66mm

Rds On (Max) @ Id, Vgs :

5.8m Ω @ 75A, 10V

Number of Terminations :

3

Threshold Voltage :

4V

Contact Plating :

Tin

Voltage - Rated DC :

75V

Recovery Time :

33 ns

Current Rating :

120A

Drain to Source Breakdown Voltage :

75V

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

65 ns

Factory Lead Time :

12 Weeks

Number of Elements :

1

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

5.8mOhm

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

480A

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tube