IRF9956TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Nominal Vgs :

20 V

Number of Terminations :

8

Rds On (Max) @ Id, Vgs :

100m Ω @ 2.2A, 10V

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mounting Type :

Surface Mount

Element Configuration :

Dual

Base Part Number :

IRF9956PBF

Number of Elements :

2

Published :

2004

Avalanche Energy Rating (Eas) :

44 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Contains Lead, Lead Free

FET Feature :

Logic Level Gate

Turn-Off Delay Time :

13 ns

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

8

Rise Time :

8.8ns

Input Capacitance (Ciss) (Max) @ Vds :

190pF @ 15V

Current Rating :

3.5A

Gate to Source Voltage (Vgs) :

20V

Height :

1.4986mm

Continuous Drain Current (ID) :

3.5A

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Length :

4.9784mm

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

30V

REACH SVHC :

No SVHC

Fall Time (Typ) :

3 ns

FET Type :

2 N-Channel (Dual)

Power Dissipation :

2W

Voltage - Rated DC :

20V

Width :

3.9878mm

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.1Ohm

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

16A

Max Power Dissipation :

2W

Transistor Element Material :

SILICON

Series :

HEXFET®

Factory Lead Time :

12 Weeks

Turn On Delay Time :

6.2 ns

Vgs(th) (Max) @ Id :

1V @ 250μA