IRF9953TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

190pF @ 15V

Element Configuration :

Dual

Power Dissipation :

2W

FET Type :

2 P-Channel (Dual)

Lead Free :

Contains Lead, Lead Free

Vgs(th) (Max) @ Id :

1V @ 250μA

Series :

HEXFET®

Base Part Number :

IRF9953PBF

Operating Temperature :

-55°C~150°C TJ

Width :

3.9878mm

Continuous Drain Current (ID) :

2.3A

Avalanche Energy Rating (Eas) :

57 mJ

Current Rating :

-2.3A

Additional Feature :

High Reliability

Transistor Element Material :

SILICON

Fall Time (Typ) :

6.9 ns

RoHS Status :

ROHS3 Compliant

FET Feature :

Standard

Resistance :

250mOhm

Mount :

Surface Mount

Number of Terminations :

8

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Voltage - Rated DC :

-30V

Published :

2004

Turn-Off Delay Time :

20 ns

Pulsed Drain Current-Max (IDM) :

10A

Drain to Source Breakdown Voltage :

-30V

Turn On Delay Time :

9.7 ns

Operating Mode :

ENHANCEMENT MODE

Length :

4.9784mm

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1.4986mm

Number of Elements :

2

Terminal Form :

Gull wing

Max Power Dissipation :

2W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

250m Ω @ 1A, 10V

Radiation Hardening :

No

Factory Lead Time :

12 Weeks

Rise Time :

14ns