IRF9953

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Elements :

2

Drain-source On Resistance-Max :

0.25Ohm

Terminal Finish :

TIN LEAD

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

1V @ 250μA

FET Type :

2 P-Channel (Dual)

Time@Peak Reflow Temperature-Max (s) :

30

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Published :

1997

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

30V

Surface Mount :

yes

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

250m Ω @ 1A, 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

190pF @ 15V

Power - Max :

2W

Current - Continuous Drain (Id) @ 25°C :

2.3A

JESD-30 Code :

R-PDSO-G8

FET Feature :

Logic Level Gate

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

57 mJ

Drain Current-Max (Abs) (ID) :

2.3A

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

8

JESD-609 Code :

e0

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

RoHS Status :

Non-RoHS Compliant

Mounting Type :

Surface Mount

Additional Feature :

High Reliability

Pulsed Drain Current-Max (IDM) :

10A

Packaging :

Tube

Peak Reflow Temperature (Cel) :

245