IRF9952TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e3

Series :

HEXFET®

Published :

2005

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Feature :

Logic Level Gate

Drain to Source Voltage (Vdss) :

30V

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PDSO-G8

Number of Terminations :

8

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

3.5A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

44 mJ

Additional Feature :

High Reliability

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

3.5A 2.3A

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Power - Max :

2W

Rds On (Max) @ Id, Vgs :

100m Ω @ 2.2A, 10V

Pulsed Drain Current-Max (IDM) :

16A

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

1V @ 250μA

JEDEC-95 Code :

MS-012AA

ECCN Code :

EAR99

Terminal Position :

Dual

RoHS Status :

Non-RoHS Compliant

FET Type :

N and P-Channel

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

190pF @ 15V

DS Breakdown Voltage-Min :

30V

Number of Elements :

2

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain-source On Resistance-Max :

0.1Ohm

Surface Mount :

yes

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Terminal Finish :

Matte Tin (Sn)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE