IRF9910TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Factory Lead Time :

12 Weeks

Nominal Vgs :

2.55 V

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Resistance :

13.4MOhm

Width :

3.9878mm

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Number of Terminations :

8

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Base Part Number :

IRF9910PBF

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

20V

Continuous Drain Current (ID) :

10A

Avalanche Energy Rating (Eas) :

33 mJ

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Published :

2004

Vgs(th) (Max) @ Id :

2.55V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Dual

Max Power Dissipation :

2W

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 10V

Mounting Type :

Surface Mount

FET Feature :

Logic Level Gate

Power Dissipation :

2W

Voltage - Rated DC :

20V

Height :

1.4986mm

Mount :

Surface Mount

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

10A 12A

Length :

4.9784mm

Current Rating :

10A

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

9.3m Ω @ 12A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

Matte Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Terminal Form :

Gull wing

Number of Elements :

2

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Type :

2 N-Channel (Dual)