IRF9910TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

2.55V @ 250µA

RoHS Status :

Non-RoHS Compliant

Drain to Source Voltage (Vdss) :

20V

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

83A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power - Max :

2W

Power Dissipation-Max (Abs) :

2W

JEDEC-95 Code :

MS-012AA

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

HTS Code :

8541.29.00.95

Published :

2004

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

20V

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

33 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Number of Terminations :

8

Rds On (Max) @ Id, Vgs :

13.4m Ω @ 10A, 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 10V

Drain Current-Max (Abs) (ID) :

10A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

2 N-Channel (Dual)

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

10A 12A

Number of Elements :

2

JESD-30 Code :

R-PDSO-G8

Drain-source On Resistance-Max :

0.0134Ohm

Surface Mount :

yes

FET Feature :

Logic Level Gate

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~150°C TJ