IRF9362TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

2.4V @ 25μA

ECCN Code :

EAR99

Nominal Vgs :

-1.8 V

Fall Time (Typ) :

53 ns

Turn On Delay Time :

5.2 ns

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

8A

Gate to Source Voltage (Vgs) :

20V

Height :

1.4986mm

Number of Pins :

8

Rise Time :

5.9ns

Current - Continuous Drain (Id) @ 25°C :

8A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Logic Level Gate

Width :

3.9878mm

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Transistor Element Material :

SILICON

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Resistance :

21mOhm

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

-8A

Threshold Voltage :

-1.8V

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

64A

Mount :

Surface Mount

Base Part Number :

IRF9362PBF

Number of Elements :

2

Turn-Off Delay Time :

115 ns

Terminal Finish :

Matte Tin (Sn)

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

21m Ω @ 8A, 10V

Length :

4.9784mm

Drain to Source Voltage (Vdss) :

30V

Power Dissipation :

2W

Published :

2007

FET Type :

2 P-Channel (Dual)

Avalanche Energy Rating (Eas) :

94 mJ

Radiation Hardening :

No

Terminal Form :

Gull wing

Element Configuration :

Dual

Max Power Dissipation :

2W

Series :

HEXFET®

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

-30V

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

8