IRF9362PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

REACH SVHC :

No SVHC

Turn-Off Delay Time :

115 ns

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

5.2 ns

Operating Mode :

ENHANCEMENT MODE

Height :

1.4986mm

Mount :

Surface Mount

Power Dissipation :

2W

Continuous Drain Current (ID) :

-8A

Number of Pins :

8

Length :

4.9784mm

Published :

2004

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

8

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

94 mJ

Base Part Number :

IRF9362PBF

Number of Elements :

2

Pulsed Drain Current-Max (IDM) :

64A

Current - Continuous Drain (Id) @ 25°C :

8A

Vgs(th) (Max) @ Id :

2.4V @ 25μA

Drain Current-Max (Abs) (ID) :

8A

Element Configuration :

Dual

Radiation Hardening :

No

Width :

3.9878mm

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Rds On (Max) @ Id, Vgs :

21m Ω @ 8A, 10V

Drain to Source Breakdown Voltage :

-30V

Nominal Vgs :

-1.8 V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

FET Type :

2 P-Channel (Dual)

ECCN Code :

EAR99

Threshold Voltage :

-1.8V

Fall Time (Typ) :

53 ns

Max Power Dissipation :

2W

Packaging :

Tube

FET Feature :

Logic Level Gate

Contact Plating :

Tin

Drain to Source Voltage (Vdss) :

30V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Recovery Time :

48 ns

Mounting Type :

Surface Mount

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Rise Time :

5.9ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V