IRF9358TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

16.3m Ω @ 9.2A, 10V

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1740pF @ 25V

Drain to Source Breakdown Voltage :

-30V

Height :

1.5mm

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

9.2A

JEDEC-95 Code :

MS-012AA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Terminations :

8

Element Configuration :

Dual

Power Dissipation :

2W

Number of Elements :

2

Terminal Form :

Gull wing

Factory Lead Time :

12 Weeks

FET Feature :

Logic Level Gate

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2.4V @ 25μA

ECCN Code :

EAR99

FET Type :

2 P-Channel (Dual)

Series :

HEXFET®

Turn On Delay Time :

5.7 ns

Turn-Off Delay Time :

146 ns

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Rise Time :

7.2ns

Width :

4mm

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

2W

Mounting Type :

Surface Mount

Base Part Number :

IRF9358PBF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.0163Ohm

Threshold Voltage :

-1.8V

Length :

5mm

Nominal Vgs :

-1.8 V

Drain to Source Voltage (Vdss) :

30V

Fall Time (Typ) :

69 ns

Avalanche Energy Rating (Eas) :

210 mJ

Pulsed Drain Current-Max (IDM) :

73A

Number of Pins :

8

Published :

2008

Transistor Application :

SWITCHING

Mount :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Terminal Finish :

Matte Tin (Sn)