IRF8788TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Drain to Source Breakdown Voltage :

30V

Vgs(th) (Max) @ Id :

2.35V @ 100μA

Power Dissipation-Max :

2.5W Ta

Turn On Delay Time :

23 ns

Fall Time (Typ) :

11 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Width :

3.9878mm

Configuration :

Single

FET Type :

N-Channel

Published :

2008

Mounting Type :

Surface Mount

Rise Time :

24ns

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 24A, 10V

REACH SVHC :

No SVHC

Turn-Off Delay Time :

23 ns

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

24A Ta

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Resistance :

2.8MOhm

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

24A

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

5720pF @ 15V

Number of Elements :

1

Vgs (Max) :

±20V

Power Dissipation :

2.5W

ECCN Code :

EAR99

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 4.5V

Number of Pins :

8

Length :

4.9784mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1.4986mm

Nominal Vgs :

1.8 V