IRF8788PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

2.8MOhm

Current - Continuous Drain (Id) @ 25°C :

24A Ta

Length :

5mm

Contact Plating :

Tin

Dual Supply Voltage :

30V

Continuous Drain Current (ID) :

24A

Power Dissipation-Max :

2.5W Ta

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

5720pF @ 15V

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Threshold Voltage :

1.8V

Turn On Delay Time :

23 ns

Width :

4mm

REACH SVHC :

No SVHC

Terminal Position :

Dual

Height :

1.5mm

Power Dissipation :

2.5W

Operating Mode :

ENHANCEMENT MODE

Recovery Time :

36 ns

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 4.5V

Transistor Application :

SWITCHING

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 24A, 10V

Nominal Vgs :

1.8 V

Drain to Source Breakdown Voltage :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Element Configuration :

Single

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Number of Terminations :

8

Published :

2005

Series :

HEXFET®

Transistor Element Material :

SILICON

Number of Pins :

8

ECCN Code :

EAR99

Rise Time :

24ns

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

230 mJ

Lead Free :

Lead Free

Packaging :

Tube

Vgs(th) (Max) @ Id :

2.35V @ 100μA

Fall Time (Typ) :

11 ns

Turn-Off Delay Time :

23 ns

Termination :

SMD/SMT

Vgs (Max) :

±20V