IRF8788PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

1.5mm

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Terminal Position :

Dual

FET Type :

N-Channel

Power Dissipation-Max :

2.5W Ta

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 24A, 10V

Continuous Drain Current (ID) :

24A

Dual Supply Voltage :

30V

REACH SVHC :

No SVHC

Resistance :

2.8MOhm

Width :

4mm

Radiation Hardening :

No

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

30V

ECCN Code :

EAR99

Number of Pins :

8

Current - Continuous Drain (Id) @ 25°C :

24A Ta

Nominal Vgs :

1.8 V

Packaging :

Tube

Power Dissipation :

2.5W

Length :

5mm

Element Configuration :

Single

Turn-Off Delay Time :

23 ns

Terminal Form :

Gull wing

Number of Elements :

1

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 4.5V

Rise Time :

24ns

Recovery Time :

36 ns

Termination :

SMD/SMT

Gate to Source Voltage (Vgs) :

20V

Published :

2005

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mount :

Surface Mount

Contact Plating :

Tin

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.35V @ 100μA

Avalanche Energy Rating (Eas) :

230 mJ

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

1.8V

Lead Free :

Lead Free

Number of Terminations :

8

Input Capacitance (Ciss) (Max) @ Vds :

5720pF @ 15V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Fall Time (Typ) :

11 ns

Transistor Application :

SWITCHING

Turn On Delay Time :

23 ns

Operating Temperature :

-55°C~150°C TJ