IRF8736TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

3.9878mm

Drain to Source Breakdown Voltage :

30V

Turn On Delay Time :

12 ns

Continuous Drain Current (ID) :

18A

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Nominal Vgs :

1.8 V

Mounting Type :

Surface Mount

Threshold Voltage :

1.8V

Contact Plating :

Tin

Radiation Hardening :

No

Height :

1.4986mm

Factory Lead Time :

12 Weeks

Resistance :

4.8mOhm

Length :

4.9784mm

Number of Terminations :

8

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2.35V @ 50μA

Rise Time :

15ns

Rds On (Max) @ Id, Vgs :

4.8m Ω @ 18A, 10V

Fall Time (Typ) :

7.5 ns

Turn-Off Delay Time :

13 ns

Terminal Form :

Gull wing

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

2315pF @ 15V

Published :

2007

Power Dissipation :

2.5W

Current - Continuous Drain (Id) @ 25°C :

18A Ta

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Power Dissipation-Max :

2.5W Ta

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 4.5V

Terminal Position :

Dual

Number of Pins :

8

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Package / Case :

8-SOIC (0.154, 3.90mm Width)