IRF8721TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

1040pF @ 15V

Nominal Vgs :

2.35 V

Radiation Hardening :

No

Turn On Delay Time :

8.2 ns

Length :

4.9784mm

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

14A Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Lead Free :

Lead Free

Turn-Off Delay Time :

8.1 ns

Height :

1.4986mm

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Power Dissipation-Max :

2.5W Ta

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 14A, 10V

Number of Pins :

8

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±20V

Number of Terminations :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Operating Temperature :

-55°C~150°C TJ

Width :

3.9878mm

Rise Time :

11ns

Transistor Application :

SWITCHING

Factory Lead Time :

12 Weeks

Drain to Source Breakdown Voltage :

30V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Power Dissipation :

2.5W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

14A

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Resistance :

8.5mOhm

Terminal Finish :

Matte Tin (Sn)

Published :

2007

Fall Time (Typ) :

7 ns

RoHS Status :

ROHS3 Compliant