IRF8721TRPBF-1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Drain to Source Voltage (Vdss) :

30 V

Power Dissipation-Max (Abs) :

2.5 W

ECCN Code :

EAR99

Package :

Tape and Reel (TR)

Surface Mount :

yes

Polarity/Channel Type :

N-Channel

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Current - Continuous Drain (Id) @ 25°C :

14A (Ta)

Reach Compliance Code :

Compliant

Operating Temperature :

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs :

8.5mOhm @ 14A, 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Supplier Device Package :

8-SOIC

FET Feature :

-

Technology :

MOSFET (Metal Oxide)

Mounting Type :

Surface Mount

Power Dissipation (Max) :

2.5W (Ta)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Product Status :

Obsolete

Series :

HEXFET®

Configuration :

Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Subcategory :

FET General Purpose Power

Manufacturer :

Infineon Technologies AG

Input Capacitance (Ciss) (Max) @ Vds :

1040 pF @ 15 V

Drain Current-Max (Abs) (ID) :

14 A

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

12 nC @ 4.5 V