IRF8721GTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Power Dissipation :

2.5W

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Transistor Element Material :

SILICON

Turn On Delay Time :

8.2 ns

Number of Pins :

8

Rise Time :

11ns

Number of Elements :

1

REACH SVHC :

Unknown

Number of Terminations :

8

Continuous Drain Current (ID) :

14A

Factory Lead Time :

12 Weeks

Terminal Finish :

Matte Tin (Sn)

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

14A Ta

Power Dissipation-Max :

2.5W Ta

Transistor Application :

SWITCHING

Width :

3.9878mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Series :

HEXFET®

Drain to Source Breakdown Voltage :

30V

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 14A, 10V

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Mount :

Surface Mount

ECCN Code :

EAR99

Height :

1.4986mm

Input Capacitance (Ciss) (Max) @ Vds :

1040pF @ 15V

Length :

4.9784mm

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

8.1 ns

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Fall Time (Typ) :

7 ns

Published :

2009

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE