IRF8714GTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Width :

3.9878mm

Mounting Type :

Surface Mount

Power Dissipation-Max :

2.5W Ta

Input Capacitance (Ciss) (Max) @ Vds :

1020pF @ 15V

Power Dissipation :

2.5W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn On Delay Time :

10 ns

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Packaging :

Tape and Reel (TR)

Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

14A Ta

Height :

1.4986mm

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

14A

Radiation Hardening :

No

Rise Time :

9.9ns

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Fall Time (Typ) :

5 ns

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Length :

4.9784mm

Vgs (Max) :

±20V

Turn-Off Delay Time :

11 ns

Drain to Source Breakdown Voltage :

30V

Series :

HEXFET®

Published :

2009

Rds On (Max) @ Id, Vgs :

8.7m Ω @ 14A, 10V