IRF8707TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

9.3nC @ 4.5V

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Vgs (Max) :

±20V

Published :

2007

Width :

3.9878mm

Height :

1.75mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Element Material :

SILICON

Number of Terminations :

8

Configuration :

SINGLE WITH BUILT-IN DIODE

Radiation Hardening :

No

Rise Time :

7.9ns

Continuous Drain Current (ID) :

11A

Terminal Form :

Gull wing

Lead Free :

Lead Free

Resistance :

11.9mOhm

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

7.3 ns

Threshold Voltage :

1.8V

Avalanche Energy Rating (Eas) :

53 mJ

Power Dissipation-Max :

2.5W Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

760pF @ 15V

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

12 Weeks

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Number of Elements :

1

Terminal Position :

Dual

Max Junction Temperature (Tj) :

150°C

FET Type :

N-Channel

Turn On Delay Time :

6.7 ns

Nominal Vgs :

1.8 V

Rds On (Max) @ Id, Vgs :

11.9m Ω @ 11A, 10V

Drain to Source Breakdown Voltage :

30V

Transistor Application :

SWITCHING

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

2.35V @ 25µA

REACH SVHC :

No SVHC

Fall Time (Typ) :

4.4 ns

RoHS Status :

ROHS3 Compliant

Series :

HEXFET®

Number of Channels :

1

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation :

2.5W

Length :

4.9784mm

Mounting Type :

Surface Mount