IRF8707PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

9.3nC @ 4.5V

Power Dissipation :

2.5W

Termination :

SMD/SMT

Radiation Hardening :

No

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

4.4 ns

Width :

3.9878mm

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

1.8V

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Rds On (Max) @ Id, Vgs :

11.9m Ω @ 11A, 10V

Nominal Vgs :

1.8 V

Number of Terminations :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Dual Supply Voltage :

30V

Avalanche Energy Rating (Eas) :

53 mJ

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Turn-Off Delay Time :

7.3 ns

Mount :

Surface Mount

Terminal Form :

Gull wing

Rise Time :

7.9ns

Published :

2007

Operating Mode :

ENHANCEMENT MODE

Recovery Time :

18 ns

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Drain to Source Breakdown Voltage :

30V

Power Dissipation-Max :

2.5W Ta

Terminal Position :

Dual

Vgs (Max) :

±20V

ECCN Code :

EAR99

Resistance :

11.9mOhm

Continuous Drain Current (ID) :

11A

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Series :

HEXFET®

Element Configuration :

Single

Height :

1.5mm

Input Capacitance (Ciss) (Max) @ Vds :

760pF @ 15V

Turn On Delay Time :

6.7 ns

Length :

5mm

Number of Pins :

8