IRF8707PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Radiation Hardening :

No

Series :

HEXFET®

Terminal Position :

Dual

Turn-Off Delay Time :

7.3 ns

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

9.3nC @ 4.5V

Rise Time :

7.9ns

Power Dissipation-Max :

2.5W Ta

Mount :

Surface Mount

Turn On Delay Time :

6.7 ns

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Transistor Element Material :

SILICON

Length :

5mm

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1.5mm

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Dual Supply Voltage :

30V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

11.9m Ω @ 11A, 10V

Nominal Vgs :

1.8 V

Number of Pins :

8

Drain to Source Breakdown Voltage :

30V

Width :

3.9878mm

Input Capacitance (Ciss) (Max) @ Vds :

760pF @ 15V

Number of Terminations :

8

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Threshold Voltage :

1.8V

Transistor Application :

SWITCHING

Fall Time (Typ) :

4.4 ns

Avalanche Energy Rating (Eas) :

53 mJ

REACH SVHC :

No SVHC

Resistance :

11.9mOhm

Termination :

SMD/SMT

Power Dissipation :

2.5W

Lead Free :

Lead Free

Recovery Time :

18 ns

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

11A

Mounting Type :

Surface Mount

Published :

2007