IRF8707GTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

4.9784mm

Fall Time (Typ) :

4.4 ns

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

1.8V

Series :

HEXFET®

Turn-Off Delay Time :

7.3 ns

Width :

3.9878mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate to Source Voltage (Vgs) :

20V

Rise Time :

7.9ns

Continuous Drain Current (ID) :

11A

Element Configuration :

Single

Drain to Source Breakdown Voltage :

30V

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

10 Weeks

Power Dissipation-Max :

2.5W Ta

Nominal Vgs :

1.8 V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

9.3nC @ 4.5V

Power Dissipation :

2.5W

Number of Pins :

8

Vgs(th) (Max) @ Id :

2.35V @ 25µA

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Mounting Type :

Surface Mount

Turn On Delay Time :

6.7 ns

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

760pF @ 15V

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

11.9m Ω @ 11A, 10V

Published :

2005

Height :

1.4986mm