IRF840STRRPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

500V

Gate to Source Voltage (Vgs) :

20V

Rise Time :

23ns

Rds On (Max) @ Id, Vgs :

850mOhm @ 4.8A, 10V

Turn-Off Delay Time :

49 ns

Turn On Delay Time :

14 ns

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Power Dissipation :

3.1W

Mounting Type :

Surface Mount

Radiation Hardening :

No

Power Dissipation-Max :

125W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Supplier Device Package :

D2PAK

Input Capacitance :

1.3nF

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4V @ 250µA

Fall Time (Typ) :

20 ns

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Rds On Max :

850 mΩ

Operating Temperature :

-55°C~150°C TJ

Drain to Source Resistance :

850mOhm

Number of Channels :

1

Factory Lead Time :

11 Weeks

Vgs (Max) :

±20V

Max Operating Temperature :

150°C

Length :

10.67mm

Number of Elements :

1

Height :

4.83mm

Min Operating Temperature :

-55°C

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Width :

9.65mm

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

500V

Continuous Drain Current (ID) :

8A

Weight :

1.437803g