IRF840STRR
- Mfr.Part #
- IRF840STRR
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 8A D2PAK
- Stock
- 8,200
- In Stock :
- 8,200
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1300pF @ 25V
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 850mOhm @ 4.8A, 10V
- Vgs (Max) :
- ±20V
- Voltage - Rated DC :
- 500V
- Drain to Source Breakdown Voltage :
- 500V
- Drain to Source Voltage (Vdss) :
- 500V
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 8A Tc
- Continuous Drain Current (ID) :
- 8A
- Number of Pins :
- 3
- RoHS Status :
- Non-RoHS Compliant
- Power Dissipation-Max :
- 3.1W Ta 125W Tc
- Mount :
- Surface Mount
- Lead Free :
- Contains Lead
- Height :
- 4.83mm
- Rise Time :
- 23ns
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Operating Temperature :
- 150°C
- Rds On Max :
- 850 mΩ
- Number of Channels :
- 1
- Published :
- 2016
- Gate Charge (Qg) (Max) @ Vgs :
- 63nC @ 10V
- Weight :
- 1.437803g
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Input Capacitance :
- 1.3nF
- Turn-Off Delay Time :
- 49 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Width :
- 9.65mm
- Min Operating Temperature :
- -55°C
- Fall Time (Typ) :
- 20 ns
- Drain to Source Resistance :
- 850mOhm
- Current Rating :
- 8A
- Supplier Device Package :
- D2PAK
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Delay Time :
- 14 ns
- Element Configuration :
- Single
- Length :
- 10.67mm
- Datasheets
- IRF840STRR
N-Channel Tape & Reel (TR) 850mOhm @ 4.8A, 10V ±20V 1300pF @ 25V 63nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF840STRR Overview
A device's maximal input capacitance is 1300pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 8A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 49 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 850mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 14 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRF840STRR Features
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 49 ns
single MOSFETs transistor is 850mOhm
a 500V drain to source voltage (Vdss)
IRF840STRR Applications
There are a lot of Vishay Siliconix
IRF840STRR applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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