IRF840PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

850m Ω @ 4.8A, 10V

Number of Channels :

1

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

8A Tc

FET Type :

N-Channel

Rise Time :

23ns

REACH SVHC :

No SVHC

Power Dissipation-Max :

125W Tc

Drain Current-Max (Abs) (ID) :

8A

Turn-Off Delay Time :

49 ns

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Length :

10.41mm

Drain to Source Breakdown Voltage :

500V

Published :

1997

Power Dissipation :

125W

Number of Pins :

3

Fall Time (Typ) :

20 ns

Gate to Source Voltage (Vgs) :

20V

Width :

4.7mm

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Turn On Delay Time :

14 ns

Lead Free :

Lead Free

Element Configuration :

Single

Continuous Drain Current (ID) :

8A

Drain-source On Resistance-Max :

0.85Ohm

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Nominal Vgs :

4 V

Pin Count :

3

Additional Feature :

AVALANCHE RATED

Factory Lead Time :

11 Weeks

Threshold Voltage :

4V

Current Rating :

8A

Mount :

Through Hole

Height :

9.01mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Radiation Hardening :

No

JEDEC-95 Code :

TO-220AB

Recovery Time :

970 ns

Voltage - Rated DC :

500V

Weight :

6.000006g

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-220-3