IRF840LPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

14 ns

Mount :

Surface Mount, Through Hole

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

850m Ω @ 4.8A, 10V

Drain-source On Resistance-Max :

0.85Ohm

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4.7mm

Additional Feature :

AVALANCHE RATED

Time@Peak Reflow Temperature-Max (s) :

40

Length :

10.41mm

Fall Time (Typ) :

20 ns

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Pin Count :

3

Published :

2011

DS Breakdown Voltage-Min :

500V

Factory Lead Time :

11 Weeks

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Height :

9.01mm

Drain Current-Max (Abs) (ID) :

8A

Element Configuration :

Single

Rise Time :

23ns

Radiation Hardening :

No

Power Dissipation :

125W

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-262AA

Weight :

6.000006g

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Continuous Drain Current (ID) :

8A

Turn-Off Delay Time :

49 ns

Packaging :

Tube

Power Dissipation-Max :

125W Tc

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Number of Pins :

3

Drain to Source Voltage (Vdss) :

500V