IRF840LCSTRRPBF
- Mfr.Part #
- IRF840LCSTRRPBF
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 8A TO263AB
- Stock
- 4,338
- In Stock :
- 4,338
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- Rise Time :
- 25ns
- Fall Time (Typ) :
- 19 ns
- Vgs (Max) :
- ±30V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Terminations :
- 2
- Element Configuration :
- Single
- Factory Lead Time :
- 12 Weeks
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Turn On Delay Time :
- 12 ns
- Number of Channels :
- 1
- Power Dissipation-Max :
- 3.1W Ta 125W Tc
- Terminal Form :
- Gull wing
- Gate Charge (Qg) (Max) @ Vgs :
- 39nC @ 10V
- Pin Count :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 8A Tc
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 9.65mm
- Number of Pins :
- 3
- Weight :
- 1.437803g
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.85Ohm
- Height :
- 4.83mm
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- DRAIN
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Temperature :
- -55°C~150°C TJ
- Drain Current-Max (Abs) (ID) :
- 8A
- JESD-30 Code :
- S-PSSO-G2
- DS Breakdown Voltage-Min :
- 500V
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 1100pF @ 25V
- RoHS Status :
- ROHS3 Compliant
- Additional Feature :
- AVALANCHE RATED
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain to Source Voltage (Vdss) :
- 500V
- Terminal Finish :
- Matte Tin (Sn)
- Published :
- 2016
- Turn-Off Delay Time :
- 27 ns
- Continuous Drain Current (ID) :
- 8A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Length :
- 10.67mm
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 850m Ω @ 4.8A, 10V
- Datasheets
- IRF840LCSTRRPBF
N-Channel Tape & Reel (TR) 850m Ω @ 4.8A, 10V ±30V 1100pF @ 25V 39nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF840LCSTRRPBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1100pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 8A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 8A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 27 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 500V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRF840LCSTRRPBF Features
a continuous drain current (ID) of 8A
the turn-off delay time is 27 ns
a 500V drain to source voltage (Vdss)
IRF840LCSTRRPBF Applications
There are a lot of Vishay Siliconix
IRF840LCSTRRPBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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