IRF840LCSTRL
- Mfr.Part #
- IRF840LCSTRL
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 8A D2PAK
- Stock
- 8,341
- In Stock :
- 8,341
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Qualification Status :
- Not Qualified
- Drain-source On Resistance-Max :
- 0.85Ohm
- Drain Current-Max (Abs) (ID) :
- 8A
- Drain to Source Voltage (Vdss) :
- 500V
- Terminal Position :
- Single
- Additional Feature :
- AVALANCHE RATED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- S-PSSO-G2
- HTS Code :
- 8541.29.00.95
- DS Breakdown Voltage-Min :
- 500V
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- Unknown
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs (Max) :
- ±30V
- Rds On (Max) @ Id, Vgs :
- 850m Ω @ 4.8A, 10V
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 39nC @ 10V
- Peak Reflow Temperature (Cel) :
- 225
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 8A Tc
- Pbfree Code :
- No
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 8A
- Number of Terminations :
- 2
- Published :
- 2016
- Power Dissipation-Max :
- 3.1W Ta 125W Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- Non-RoHS Compliant
- Avalanche Energy Rating (Eas) :
- 510 mJ
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 1100pF @ 25V
- Mount :
- Surface Mount
- Pin Count :
- 3
- Datasheets
- IRF840LCSTRL
N-Channel Tape & Reel (TR) 850m Ω @ 4.8A, 10V ±30V 1100pF @ 25V 39nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF840LCSTRL Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 510 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1100pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 8A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 8A.Normal operation requires that the DS breakdown voltage remain above 500V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRF840LCSTRL Features
the avalanche energy rating (Eas) is 510 mJ
a continuous drain current (ID) of 8A
a 500V drain to source voltage (Vdss)
IRF840LCSTRL Applications
There are a lot of Vishay Siliconix
IRF840LCSTRL applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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