IRF840LCLPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

9.65mm

Continuous Drain Current (ID) :

8A

Drain to Source Resistance :

850mOhm

Radiation Hardening :

No

Turn-Off Delay Time :

27 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On Max :

850 mΩ

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Length :

10.41mm

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 25V

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

19 ns

Drain to Source Voltage (Vdss) :

500V

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

850mOhm @ 4.8A, 10V

Rise Time :

25ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Published :

2014

Turn On Delay Time :

12 ns

Max Operating Temperature :

150°C

Mounting Type :

Through Hole

Power Dissipation :

3.1W

Min Operating Temperature :

-55°C

Number of Channels :

1

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Width :

4.7mm

Input Capacitance :

1.1nF

Weight :

2.387001g

Power Dissipation-Max :

3.1W Ta 125W Tc

Element Configuration :

Single

Factory Lead Time :

8 Weeks

Supplier Device Package :

I2PAK

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Vgs (Max) :

±30V