IRF840B

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Published :

2005

Power Dissipation-Max :

134W Tc

Nominal Vgs :

4 V

Element Configuration :

Single

Input Capacitance :

1.8nF

Gate to Source Voltage (Vgs) :

30V

Number of Pins :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

REACH SVHC :

No SVHC

Package / Case :

TO-220-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Number of Elements :

1

Drain to Source Breakdown Voltage :

500V

Rds On (Max) @ Id, Vgs :

800mOhm @ 4A, 10V

Termination :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Max Operating Temperature :

150°C

Packaging :

Tube

Resistance :

800mOhm

Drain to Source Voltage (Vdss) :

500V

Fall Time (Typ) :

75 ns

Mount :

Through Hole

Width :

10.67mm

Min Operating Temperature :

-55°C

Rise Time :

65ns

Power Dissipation :

134W

Continuous Drain Current (ID) :

8A

Vgs (Max) :

±30V

Turn-Off Delay Time :

125 ns

FET Type :

N-Channel

Drain to Source Resistance :

650mOhm

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 10V

Supplier Device Package :

TO-220-3

Rds On Max :

800 mΩ

Lead Free :

Lead Free

RoHS Status :

RoHS Compliant

Dual Supply Voltage :

500V