IRF840ASTRRPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

500V

Height :

4.83mm

Fall Time (Typ) :

19 ns

Packaging :

Tape and Reel (TR)

Rds On Max :

850 mΩ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2016

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Surface Mount

Max Operating Temperature :

150°C

Supplier Device Package :

D2PAK

Factory Lead Time :

8 Weeks

Gate to Source Voltage (Vgs) :

30V

Min Operating Temperature :

-55°C

FET Type :

N-Channel

Input Capacitance :

1.018nF

Vgs (Max) :

±30V

Radiation Hardening :

No

Length :

10.67mm

Turn-Off Delay Time :

26 ns

Drain to Source Voltage (Vdss) :

500V

Number of Channels :

1

Continuous Drain Current (ID) :

8A

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

125W Tc

Number of Pins :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Weight :

1.437803g

Input Capacitance (Ciss) (Max) @ Vds :

1018pF @ 25V

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Drain to Source Resistance :

850mOhm

Rds On (Max) @ Id, Vgs :

850mOhm @ 4.8A, 10V

Power Dissipation :

3.1W

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Turn On Delay Time :

11 ns

Width :

9.65mm

Operating Temperature :

-55°C~150°C TJ

Rise Time :

23ns