IRF840APBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

850mOhm

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Contact Plating :

Tin

Rise Time :

23ns

Number of Channels :

1

Radiation Hardening :

No

Drain to Source Resistance :

850mOhm

Rds On Max :

850 mΩ

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

850mOhm @ 4.8A, 10V

Voltage - Rated DC :

500V

Supplier Device Package :

TO-220AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

19 ns

Drain to Source Breakdown Voltage :

500V

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Power Dissipation-Max :

125W Tc

Turn-Off Delay Time :

26 ns

Input Capacitance (Ciss) (Max) @ Vds :

1018pF @ 25V

Length :

10.41mm

Min Operating Temperature :

-55°C

Gate to Source Voltage (Vgs) :

30V

Turn On Delay Time :

11 ns

Threshold Voltage :

4V

Drain to Source Voltage (Vdss) :

500V

Current Rating :

8A

Lead Free :

Lead Free

Input Capacitance :

1.018nF

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Width :

4.7mm

Mounting Type :

Through Hole

Weight :

6.000006g

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

8A

Number of Pins :

3

Height :

9.01mm

FET Type :

N-Channel

Published :

2011

Package / Case :

TO-220-3

Factory Lead Time :

11 Weeks

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Nominal Vgs :

4 V

Power Dissipation :

125W

Mount :

Through Hole

Max Operating Temperature :

150°C