IRF840ALPBF
- Mfr.Part #
- IRF840ALPBF
- Manufacturer
- Vishay
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 8A I2PAK
- Stock
- 7,554
- In Stock :
- 7,554
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Max Operating Temperature :
- 150°C
- Supplier Device Package :
- I2PAK
- Factory Lead Time :
- 8 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 3.1W Ta 125W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 8A Tc
- Rds On (Max) @ Id, Vgs :
- 850mOhm @ 4.8A, 10V
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1018pF @ 25V
- Number of Channels :
- 1
- Min Operating Temperature :
- -55°C
- Turn On Delay Time :
- 11 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Input Capacitance :
- 1.018nF
- Drain to Source Voltage (Vdss) :
- 500V
- REACH SVHC :
- Unknown
- Gate to Source Voltage (Vgs) :
- 30V
- Rds On Max :
- 850 mΩ
- Turn-Off Delay Time :
- 26 ns
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Drain to Source Resistance :
- 850mOhm
- Continuous Drain Current (ID) :
- 8A
- Height :
- 9.65mm
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Power Dissipation :
- 3.1W
- Mount :
- Through Hole
- Vgs (Max) :
- ±30V
- Packaging :
- Tube
- Rise Time :
- 23ns
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2011
- Width :
- 4.7mm
- Fall Time (Typ) :
- 19 ns
- Weight :
- 2.387001g
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 10.41mm
- FET Type :
- N-Channel
- Datasheets
- IRF840ALPBF
N-Channel Tube 850mOhm @ 4.8A, 10V ±30V 1018pF @ 25V 38nC @ 10V 500V TO-262-3 Long Leads, I2Pak, TO-262AA
IRF840ALPBF Overview
A device's maximum input capacitance is 1018pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 8A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 26 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 850mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRF840ALPBF Features
a continuous drain current (ID) of 8A
the turn-off delay time is 26 ns
single MOSFETs transistor is 850mOhm
a 500V drain to source voltage (Vdss)
IRF840ALPBF Applications
There are a lot of Vishay Siliconix
IRF840ALPBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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