IRF840A

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

4.7mm

Input Capacitance (Ciss) (Max) @ Vds :

1018pF @ 25V

Power Dissipation :

125W

Fall Time (Typ) :

19 ns

FET Type :

N-Channel

Length :

10.41mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

9.01mm

Published :

2011

Max Operating Temperature :

150°C

Number of Channels :

1

Drain to Source Breakdown Voltage :

500V

Weight :

6.000006g

Rds On (Max) @ Id, Vgs :

850mOhm @ 4.8A, 10V

RoHS Status :

Non-RoHS Compliant

Rise Time :

23ns

Mount :

Through Hole

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Lead Free :

Contains Lead

Current Rating :

8A

Drain to Source Voltage (Vdss) :

500V

Drain to Source Resistance :

850mOhm

Element Configuration :

Single

Mounting Type :

Through Hole

Turn On Delay Time :

11 ns

Package / Case :

TO-220-3

Number of Elements :

1

Vgs (Max) :

±30V

Min Operating Temperature :

-55°C

Voltage - Rated DC :

500V

Number of Pins :

3

Power Dissipation-Max :

125W Tc

Turn-Off Delay Time :

26 ns

Rds On Max :

850 mΩ

Continuous Drain Current (ID) :

8A

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance :

1.018nF

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Gate to Source Voltage (Vgs) :

30V

Supplier Device Package :

TO-220AB