IRF840

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

JESD-609 Code :

e0

Drain Current-Max (Abs) (ID) :

8A

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

TIN LEAD

Pbfree Code :

No

Drain to Source Voltage (Vdss) :

500V

Case Connection :

DRAIN

RoHS Status :

Non-RoHS Compliant

DS Breakdown Voltage-Min :

500V

Power Dissipation-Max :

125W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

850m Ω @ 4.8A, 10V

Transistor Element Material :

SILICON

Surface Mount :

No

Drain-source On Resistance-Max :

0.85Ohm

Package / Case :

TO-220-3

JEDEC-95 Code :

TO-220AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSFM-T3

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Qualification Status :

COMMERCIAL

Pulsed Drain Current-Max (IDM) :

32A

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Packaging :

Tube

Reach Compliance Code :

Unknown

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Mounting Type :

Through Hole

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1.3pF @ 25V