IRF840
- Mfr.Part #
- IRF840
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 8A TO220AB
- Stock
- 33,548
- In Stock :
- 33,548
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e0
- Qualification Status :
- COMMERCIAL
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pulsed Drain Current-Max (IDM) :
- 32A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.3pF @ 25V
- FET Type :
- N-Channel
- RoHS Status :
- Non-RoHS Compliant
- Rds On (Max) @ Id, Vgs :
- 850m Ω @ 4.8A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.85Ohm
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 3
- JEDEC-95 Code :
- TO-220AB
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 8A Tc
- Package / Case :
- TO-220-3
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Surface Mount :
- No
- Terminal Finish :
- TIN LEAD
- Power Dissipation-Max :
- 125W Tc
- JESD-30 Code :
- R-PSFM-T3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tube
- Drain Current-Max (Abs) (ID) :
- 8A
- Mounting Type :
- Through Hole
- DS Breakdown Voltage-Min :
- 500V
- Reach Compliance Code :
- Unknown
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- Transistor Element Material :
- SILICON
- Terminal Position :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 63nC @ 10V
- Drain to Source Voltage (Vdss) :
- 500V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pbfree Code :
- No
- Datasheets
- IRF840
N-Channel Tube 850m Ω @ 4.8A, 10V ±20V 1.3pF @ 25V 63nC @ 10V 500V TO-220-3
IRF840 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1.3pF @ 25V.A device's drain current is its maximum continuous current, and this device's drain current is 8A.A maximum pulsed drain current of 32A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 500V.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRF840 Features
based on its rated peak drain current 32A.
a 500V drain to source voltage (Vdss)
IRF840 Applications
There are a lot of Rochester Electronics, LLC
IRF840 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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