IRF8327STRPBF
- Mfr.Part #
- IRF8327STRPBF
- Manufacturer
- International Rectifier
- Package / Case
- DirectFET™ Isometric SQ
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 14A/60A DIRECTFT
- Stock
- 25,238
- In Stock :
- 25,238
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- 30V
- Mount :
- Surface Mount
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Current - Continuous Drain (Id) @ 25°C :
- 14A Ta 60A Tc
- Turn-Off Delay Time :
- 9.3 ns
- Pulsed Drain Current-Max (IDM) :
- 110A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1430pF @ 15V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 7.3m Ω @ 14A, 10V
- Power Dissipation-Max :
- 2.2W Ta 42W Tc
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 4.5V
- Packaging :
- Tape and Reel (TR)
- Turn On Delay Time :
- 7.8 ns
- Transistor Element Material :
- SILICON
- Case Connection :
- DRAIN
- Rise Time :
- 8.9ns
- Factory Lead Time :
- 12 Weeks
- Terminal Position :
- BOTTOM
- Power Dissipation :
- 42W
- Lead Free :
- Lead Free
- Package / Case :
- DirectFET™ Isometric SQ
- JESD-30 Code :
- R-XBCC-N3
- Vgs (Max) :
- ±20V
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Pins :
- 8
- Drain Current-Max (Abs) (ID) :
- 14A
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -40°C~150°C TJ
- Avalanche Energy Rating (Eas) :
- 62 mJ
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Drain-source On Resistance-Max :
- 0.0073Ohm
- Fall Time (Typ) :
- 5.3 ns
- Continuous Drain Current (ID) :
- 60A
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 2.4V @ 25μA
- Published :
- 2011
- Radiation Hardening :
- No
- Datasheets
- IRF8327STRPBF

N-Channel Tape & Reel (TR) 7.3m Ω @ 14A, 10V ±20V 1430pF @ 15V 14nC @ 4.5V DirectFET™ Isometric SQ
IRF8327STRPBF Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 62 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1430pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 60A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.A device can conduct a maximum continuous current of [14A] according to its drain current.It is [9.3 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 110A.A turn-on delay time of 7.8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
IRF8327STRPBF Features
the avalanche energy rating (Eas) is 62 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 9.3 ns
based on its rated peak drain current 110A.
IRF8327STRPBF Applications
There are a lot of Infineon Technologies
IRF8327STRPBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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