IRF8327STRPBF
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- Mfr.Part #
- IRF8327STRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- DirectFET™ Isometric SQ
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 14A DIRECTFET
- Stock
- 32,171
- In Stock ：
- 32,171
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- DirectFET™ Isometric SQ
- Turn On Delay Time :
- 7.8 ns
- Power Dissipation :
- 42W
- Turn-Off Delay Time :
- 9.3 ns
- Radiation Hardening :
- No
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Matte Tin (Sn)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1430pF @ 15V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain Current-Max (Abs) (ID) :
- 14A
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 2.4V @ 25μA
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Case Connection :
- DRAIN
- JESD-30 Code :
- R-XBCC-N3
- Vgs (Max) :
- ±20V
- Pulsed Drain Current-Max (IDM) :
- 110A
- Operating Temperature :
- -40°C~150°C TJ
- Continuous Drain Current (ID) :
- 60A
- Number of Pins :
- 8
- Published :
- 2011
- Drain-source On Resistance-Max :
- 0.0073Ohm
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 30V
- Avalanche Energy Rating (Eas) :
- 62 mJ
- Fall Time (Typ) :
- 5.3 ns
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- BOTTOM
- Mount :
- Surface Mount
- Factory Lead Time :
- 12 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Terminations :
- 3
- Power Dissipation-Max :
- 2.2W Ta 42W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 4.5V
- Rise Time :
- 8.9ns
- Current - Continuous Drain (Id) @ 25°C :
- 14A Ta 60A Tc
- Rds On (Max) @ Id, Vgs :
- 7.3m Ω @ 14A, 10V
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Datasheets
- IRF8327STRPBF
N-Channel Tape & Reel (TR) 7.3m Ω @ 14A, 10V ±20V 1430pF @ 15V 14nC @ 4.5V DirectFET™ Isometric SQ
IRF8327STRPBF Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 62 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1430pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 60A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.A device can conduct a maximum continuous current of [14A] according to its drain current.It is [9.3 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 110A.A turn-on delay time of 7.8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
IRF8327STRPBF Features
the avalanche energy rating (Eas) is 62 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 9.3 ns
based on its rated peak drain current 110A.
IRF8327STRPBF Applications
There are a lot of Infineon Technologies
IRF8327STRPBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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